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| EID1414A1-5 UPDATED 07/12/2007 14.00-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES * * * * * * * 14.00-14.50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.5 dBm Output Power at 1dB Compression 7.5 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID1414A1-5 is a high power, highly linear, single stage MFET amplifier in a flange mount package. This amplifier features Excelics' unique PHEMT transistor technology. Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Ta = 25C) SYMBOL P1dB G1dB G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ = 1200mA Gain at 1dB Compression f = 14.00-14.50GHz VDS = 10 V, IDSQ = 1200mA Gain Flatness f = 14.00-14.50GHz VDS = 10 V, IDSQ = 1200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ = 1200mA f = 14.00-14.50GHz Drain Current at 1dB Compression f = 14.00-14.50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance2 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA MIN 37.0 6.5 TYP 37.5 7.5 0.6 35 1400 2080 -2.5 5.5 1800 2880 -4.0 6.0 o MAX UNITS dBm dB dB % mA mA V C/W Notes: 1. Tested with 100 Ohm gate resistor. 2. Overall Rth depends on case mounting. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 1 of 4 Revised July 2007 EID1414A1-5 UPDATED 07/12/2007 14.00-14.50 GHz 5-Watt Internally-Matched Power FET CHARACTERISTIC VALUE 10 V -4.5 V IDSS 40 mA @ 3dB compression 23 W 150C -65/+150C ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF. 2. Bias conditions must also satisfy the following equation PT < (TCH -TPKG)/RTH; where TPKG = temperature of package, and PT = (VDS * IDS) - (POUT - PIN). PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 system, de-embedded to edge of package) VDS = 10 V, IDSQ = 1200mA S11 and S22 -1.0 1.0 0. 6 Swp Max 15GHz 0 0.8 S21 and S12 20 -0.8 -0 .6 2. -3 .0 -1 0. 0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 -0 .4 0. 4 .6 S[2,2] * EID1414-5 -0.8 0.8 .0 -0 -2 -1.0 FREQ (GHz) 13.60 13.70 13.80 13.90 14.00 14.10 14.20 14.30 14.40 14.50 14.60 14.70 14.80 --- S11 --MAG ANG 0.3380 -90.79 0.2971 -97.44 0.2552 -105.20 0.2045 -112.85 0.1524 -122.48 0.0956 -135.11 0.0411 -169.43 0.0435 81.13 0.1025 54.46 0.1651 42.41 0.2214 33.93 0.2802 26.00 0.3322 20.00 14.90 0.3800 13.06 Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com -3 S[1,1] * EID1414-5 2. 0 Swp Min 13.5GHz - 5. -4 0 2 -0. -1 0. 0 0. 2 -0 . - 5. 0 .2 0 5.0 2 S 2 1 a n d S 12 (d B ) -4 .0 .0 .0 -0 -2 .0 .4 0. 4 3. 0 10 4. 0 0 10 .0 -10 DB(|S[2,1]|) * EID1414-5 DB(|S[1,2]|) * EID1414-5 10.0 3. 0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 4. 5.0 0 10 .0 -20 -30 13.5 14 Frequency (GHz) 14.5 15 0. 6 1.0 --- S21 --MAG ANG 2.5944 -176.44 2.6490 175.75 2.6962 167.96 2.7481 159.02 2.7628 151.12 2.7767 142.28 2.7844 133.47 2.7578 124.71 2.7359 115.60 2.6853 106.41 2.6150 98.28 2.5646 89.44 2.4814 81.16 --- S12 --MAG ANG 0.0603 170.24 0.0609 161.63 0.0630 153.33 0.0655 145.93 0.0694 136.76 0.0683 128.89 0.0703 119.55 0.0701 111.32 0.0691 101.22 0.0682 91.51 0.0693 84.19 0.0673 75.38 0.0659 66.29 --- S22 --MAG ANG 0.4755 -153.89 0.4390 -160.10 0.3950 -166.55 0.3527 -173.84 0.3036 177.97 0.2507 166.52 0.2036 152.97 0.1626 134.59 0.1352 109.08 0.1272 81.88 0.1428 53.54 0.1711 33.11 0.2059 19.24 2.3964 72.99 0.0653 58.58 0.2374 7.89 page 2 of 4 Revised July 2007 EID1414A1-5 UPDATED 07/12/2007 14.00-14.50 GHz 5-Watt Internally-Matched Power FET Power De-rating Curve Power Dissipation vs. Temperature 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 Total Power Dissipation (W) Potentially Unsafe Operating Region Safe Operating Region 25 50 75 100 Case Temperature (C) 125 150 Typical Power Data (VDS = 10 V, IDSQ = 1200 mA) P-1dB & G-1dB vs Frequency 39 38 11 10 9 8 7 P-1dB (dBm) 34 13.6 13.8 14.0 14.2 G-1dB (dB) 14.4 6 14.6 P-1dB (dBm) 37 36 35 Frequency (GHz) Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com G-1dB (dB) page 3 of 4 Revised July 2007 EID1414A1-5 UPDATED 07/12/2007 14.00-14.50 GHz 5-Watt Internally-Matched Power FET PACKAGE OUTLINE Dimensions in inches, Tolerance + .005 unless otherwise specified SOURCE .060 MIN. Excelics EID1414A1-5 .060 MIN. .650.008 .512 GATE DRAIN .319 YYWW SN .094 .382 .022 .045 .004 .129 .070 .008 ALL DIMENSIONS IN INCHES ORDERING INFORMATION Part Number Grade1 fTest (GHz) P1dB (min) EID1414A1-5 Notes: Industrial 14.00-14.50 GHz 37.0 1. Contact factory for military and hi-rel grades. 2. Exact test conditions are specified in "Electrical Characteristics" table. DISCLAIMER EXCELICS SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. EXCELICS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN. LIFE SUPPORT POLICY EXCELICS SEMICONDUCTOR PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF EXCELICS SEMICONDUCTOR, INC. AS HERE IN: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com page 4 of 4 Revised July 2007 |
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